Details
Power electronics converters are ubiquitous in everyday life to control electric power in countless applications, from
power supplies in consumer electronics to electric motor drives in domestic appliances and electric vehicles, to
power converters for wind and solar generator etc. They control a significant part of the electricity we consume and
will become even more crucial for achieving net zero as they are the enabling technology behind electric vehicles,
renewable generation (solar, wind etc.), battery energy storage etc.
Power electronics converters have been traditionally designed with Silicon-based switching devices which have
dominated the power electronics industry thanks to their low cost, ease of manufacturing, reliability and wide
industrial base. However, after more than five decades of continuous improvements in Si devices, the theoretical
limits of their performance are approaching. Wide bandgap materials such as Silicon Carbide (SiC) and Gallium
Nitride (GaN), hold the promises of a new leap in power conversion efficiency. GaN in particular, will allow the
development of smaller, faster switching and more efficient devices, which will enable a novel class of power
electronics converters.
This project aims to quantify the benefits, design and optimise novel power electronics converters based on GaN
devices for high performance applications such as more electric aircrafts, motor drives for electric vehicles and fast
battery chargers.
Interested candidates are strongly encouraged to contact the project supervisors to discuss your interest in and suitability for the project prior to submitting your application.
Please refer to the EPSRC DTP webpage for detailed information about the EPSRC DTP and how to apply.
Apply here: Application Form (sheffield.ac.uk)
Funding Notes
The award will fund the full (UK or Overseas) tuition fee and UKRI stipend (currently £18,622 per annum) for 3.5 years, as well as a research grant to support costs associated with the project.
