Permanent Researcher in Next-Generation Semiconductor Devices at NIMS

National Institute for Materials Science (NIMS, Tsukuba, Japan) invites international applications from researchers who can conduct research in semiconductor devices. 

Research field and position: Permanent Researcher, Next-Generation Semiconductor devices

Work description:

Research and development aimed at the realization of ultra-high-speed and ultra-low-power GAA-CFET*, focusing on the following areas:

1. Thin-film deposition (including crystal growth) and characterization of two-dimensional (2D) transition metal dichalcogenides (TMDCs) and oxide semiconductor materials
2. Semiconductor device fabrication and integration technologies

* GAA: Gate-All-Around, CFET: Complementary Field-Effect Transistors

https://www.nims.go.jp/group/semidev/index_en.html

Qualifications/Requirements:

1. Possess a Ph.D. degree or be expected to obtain a Ph.D. by the start date of employment.
2. A doctoral thesis related to semiconductor materials and devices is highly desirable.
3. experience in the research and development of semiconductor materials and devices (e.g., Group IV, III-V, III-N, oxide semiconductors, and 2D transition metal dichalcogenides) is preferred.
4. Excellent written and oral communication skills in English.

How to Apply:

After obtaining an Applicant ID, applicants are required to submit the prescribed Application documents via email.
To obtain an Applicant ID and download the application documents, please refer to the following URL.

https://www.nims.go.jp/eng/employment/data/vht5c10000004g59.html